A 0.75 dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductor

A two-stage monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) fabricated in 0.5 mu m GaAs pHEMT is presented. The Miller effect introduced by the parasitic gate-drain capacitance is utilized to decrease the value of the input inductor. Additionally, the input on-chip inductor is a novel high Q gradual structure. The noise figure is reduced with these two methods. With good input and output matching, the LNA achieves a noise figure of 0.75 dB and a small signal gain of 32.7 dB over 698-806 MHz. The input 1 dB compression point is -21.8 dBm and the input third order interception point is -10 dBm.