Journal
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON CONDENSED MATTER PHYSICS 2014 (ICCMP 2014)
Volume 1661, Issue -, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4915472
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Memristors show great potential for memory applications due to their high scalability and reliability. Memristor is a fourth basic electrical circuit element which gives relationship between the flux and charge. TiO2 is used as an active layer for the memristor and prepared by sol-gel method. Al/TiO2/Ag memristor device has been fabricated successfully and characterized by current-voltage (I-V) measurements. The non-linear I-V plot with hysteresis loop has been observed, which is a fingerprint of memristor. The retention behavior of the device has been witnessed from the current time plots. The device shows good stability over a long period of time. Thus, the results indicate that the TiO2 is a good candidate for memory device applications.
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