4.8 Article

Solid-state-ligand-exchange free quantum dot ink-based solar cells with an efficiency of 10.9%

Journal

ENERGY & ENVIRONMENTAL SCIENCE
Volume 11, Issue 6, Pages 1603-1609

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c8ee00278a

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Funding

  1. Global Scholarship Program for Foreign Graduate Students at Kookmin University in Korea
  2. National Research Foundation (NRF) - Korean Government (MSIP) [2017M2A2A6A01020854, 2017R1A2B2009178, 2016R1A5A1012966]

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While colloidal quantum dot based solar cells (CQDSCs) have recently achieved power conversion efficiencies (PCE) up to 11.3%, the CQD active layers are fabricated almost exclusively by a combined process of in situ solid-state ligand exchange (SSE) with multiple layer-by-layer (LbL) deposition, which has been a major obstacle to high-throughput processing. In this work, we developed, for the first time, high-efficiency CQDSCs without using either the SSE or LbL technique. The fabrication of n-p quantum dot junctions by SSE-free direct coating was achieved using n-type CQD ink and p-type CQD ink. The ink based devices achieved a PCE of approximate to 11%, which is comparable to the current state-of-the-art performance. The CQD inks enabled, for the first time, use of the doctor-blade coating method for device fabrication. Notably, the PCE of the bladed CQDSCs was remarkably high, at >10%, which suggests its potential use in other industrially friendly processes.

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