Energy Storage of Polyarylene Ether Nitriles at High Temperature

Polyarylene ether nitrile (PEN) was synthesized and used as film capacitors for energy storage at high temperature. Scanning electron microscopy observation indicated that the films of PEN have pinholes at nanoscales which restricted the energy storage properties of the material. The pinhole shadowing effect through which the energy storage properties of PEN were effectively improved to be 2.3 J/cm(3) was observed by using the overlapped film of PEN. The high glass transition temperature (T (g)) of PEN was as high as 216 A degrees C and PEN film showed stable dielectric constant, breakdown strength and energy storage density before the T (g). The PEN films will be a potential candidate as high performance electronic storage materials used at high temperature.