Journal
DYES AND PIGMENTS
Volume 167, Issue -, Pages 255-261Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.dyepig.2018.07.011
Keywords
Biindolo[2,3-b]quinoxaline; Ullmann C-N coupling; Organic transistor memory; Hole trapping; Charge storage
Funding
- 973 program [2015CB932200]
- National Natural Science Foundation of China [NSFC 21502091, 21502092, 21504041, 21573111, 5161101159, 21404057]
- Natural Science Foundation of Jiangsu Province [14KJB430017, BK20150064, BK20130912, BK20140948, YX03001, XCL-CXTD-009]
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A novel asymmetrical biindolo[2,3-b] quinoxaline derivative (IQIQ) was prepared via the CuI catalysed C-N Ullmann coupling method and fully characterized. For comparison, two solution-processing organic transistor memory devices (A and B) were constructed. In device A with IQIQ, the parameters of large memory window (48 V) but weak on/off current ratio (similar to 10(1) at 10(4) s) indicated the good hole trapping ability determined by the matched HOMO level but weak endurance property of IQIQ. Meanwhile, device B with PS blended IQIQ presented not only similar large memory window but also apparently improved the hole endurance property of IQIQ determined by the blending material which intrinsically acted as the bifunctional tunneling:floating gate layer.
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