4.3 Article

Involvement of flocculin in negative potential-applied ITO electrode adhesion of yeast cells

Journal

FEMS YEAST RESEARCH
Volume 15, Issue 6, Pages -

Publisher

OXFORD UNIV PRESS
DOI: 10.1093/femsyr/fov064

Keywords

Saccharomyces cerevisiae; Flo10; electrical attachment; potential-controlled electrode; indium tin oxide; single-cell cultivation

Funding

  1. Ministry of Education, Culture, Sports, Science and Technology of Japan [25660173]
  2. Grants-in-Aid for Scientific Research [25660173] Funding Source: KAKEN

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The purpose of this study was to develop novel methods for attachment and cultivation of specifically positioned single yeast cells on a microelectrode surface with the application of a weak electrical potential. Saccharomyces cerevisiae diploid strains attached to an indium tin oxide/glass (ITO) electrode to which a negative potential between -0.2 and -0.4 V vs. Ag/AgCl was applied, while they did not adhere to a gallium-doped zinc oxide/glass electrode surface. The yeast cells attached to the negative potential-applied ITO electrodes showed normal cell proliferation. We found that the flocculin FLO10 gene-disrupted diploid BY4743 mutant strain (flo10 Delta/flo10 Delta) almost completely lost the ability to adhere to the negative potential-applied ITO electrode. Our results indicate that the mechanisms of diploid BY4743 S. cerevisiae adhesion involve interaction between the negative potential-applied ITO electrode and the Flo10 protein on the cell wall surface. A combination of micropatterning techniques of living single yeast cell on the ITO electrode and omics technologies holds potential of novel, highly parallelized, microchip-based single-cell analysis that will contribute to new screening concepts and applications.

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