Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 7, Issue 32, Pages 18120-18124Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b05394
Keywords
germanium nanowires; flexible substrates; crystal orientation control; chemical vapor deposition; metal-induced crystallization
Funding
- Japan Society for the Promotion of Science (JSPS) KAKENHI [26709019, 26600083]
- JGC-S Scholarship Foundation
- Grants-in-Aid for Scientific Research [26600083, 26600049, 26246021, 26709019] Funding Source: KAKEN
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Transfer-free fabrication of vertical Ge nanowires (NW's) on a plastic substrate is demonstrated using a vapor liquid-solid (VLS) method. The crystal quality of Ge seed layers (50 nm thickness) prepared on plastic substrates strongly influenced the VLS growth morphology, i.e., the density, uniformity, and crystal quality of Ge NWs. The metal-induced layer exchange yielded a (111)-oriented Ge seed layer at 325 degrees C, which allowed for the VLS growth of vertically aligned Ge NWs. The Ge NW array had almost the same quality as that formed on a bulk Ge(111) substrate. Transmission electron microscopy demonstrated that the Ge NWs were defect-free single crystals. The present investigation paves the way for advanced electronic optical devices integrated on a low-cost flexible substrate.
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