Journal
JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS
Volume 66, Issue 4, Pages 226-230Publisher
SLOVAK UNIV TECHNOLOGY
DOI: 10.2478/jee-2015-0036
Keywords
molecular beam epitaxy; excess nois; lasers diodes; vertical cavity surface emitting; gasb substrate
Categories
Funding
- Centre for Research and Utilization of Renewable Energy [LO 1210, FEKT-S-14-2293]
- project FAST [S-13-2149]
Ask authors/readers for more resources
The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE (vertical cavity surface emitting). Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE (molecular beam epitaxy) technology. The results demonstrate that the lasers prepared by new MBE technology have higher quality than the samples prepared by using the classic MBE technology.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
