Journal
CHEMSUSCHEM
Volume 11, Issue 5, Pages 837-842Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/cssc.201702221
Keywords
graded heterojunction; hole transporting materials; interfacial engineering; perovskite solar cells; stability
Funding
- National Natural Science Foundation of China [21773128]
- key research and development projects of Sichuan province [2017GZ0052]
- National Postdoctoral Program for Innovative Talents [BX201600138]
- Anshan Hifichem Co. Ltd.
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It is essential to minimize the interfacial trap states and improve the carrier collection for high efficiency perovskite solar cells (PSCs). Herein, we present a facile method to construct a p-type graded heterojunction (GHJ) in normal PSCs by deploying a gradient distribution of hole-transporting materials (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], PTAA, in this case) in the shallow perovskite layer. The formation of the GHJ structure facilitates charge transfer and collection, and passivates interfacial trap states, thus delivering a power conversion efficiency (PCE) of 20.05% along with steady output efficiency of 19.3%, which is among the highest efficiencies for cesium formamidinium (Cs-FA) lead halide PSCs. Moreover, the unencapsulated devices based on these (Cs-FA) lead halide perovskites show excellent long-term stability; more than 95% of their initial PCE can be retained after 1440 h storage under ambient conditions. This study may provide an effective strategy to fabricate high-efficiency PSCs with great stability.
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