Latest Results on 1200 V 4H-SiC CIMOSFETs with Rsp,on of 3.9 mΩ•cm2 at 150°C

The concept of CIMOSFET (central Implant MOSFET) on SiC has experimentally shown significant improvements in both on resistance and gate charge over the conventional SiC MOSFET. In this paper, the latest results on 1200 V rated, 20 A SiC CIMOSFETs are described. The specific on-resistance (R-sp,R-on) values are further reduced to 2.7 m Omega center dot cm(2) at 25 degrees C, and 3.9 m Omega center dot cm(2) at 150 degrees C which is the lowest at elevated temperatures among reported on 1200 V industrial SiC MOSFETs, to our best knowledge. In addition, the gate charge of the CIMOSFET is reduced to half of the commercially available 1200 V, 20 A SiC DMOSFET. The superior performance of the SiC CIMOSFET combined with large process tolerances makes the device a promising candidate for mass production of SiC power MOSFET aiming for high power, high temperature and high speed applications.