Journal
CERAMICS INTERNATIONAL
Volume 44, Issue 15, Pages 17743-17748Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2018.06.241
Keywords
P-type transparent conductive oxide; Delafossite; CuCrO2; Thin film; Epitaxial; Pulsed laser deposition
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Funding
- National Research Foundation of Korea (NRF) - korean government (MSIP) [NRF-2017R1A4A1015022]
- Industrial Material Fundamental Technology Development Program - Ministry of Trade, industry & Energy(MI, Korea) [10063473]
- DGIST R & D Programs of the Ministry of Science, ICT & Future Planning of Korea [18-BD-05]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10063473] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Ministry of Science & ICT (MSIT), Republic of Korea [18-BD-05] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2017R1A4A1015022] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this study, the structural, electrical, and optical properties of CuCr1-xNiO2 epitaxial films (x = 0, 0.01, 0.03, 0.05), which exhibited p-type properties, were investigated. The (001)-oriented epitaxial films were deposited on c-plane alpha-Al2O3 substrates using pulsed laser deposition at a growth temperature of 700 degrees C and oxygen pressure of 10 mTorr. The optical energy band gap of the CuCr0.95Ni0.05O2 film was determined to be 3.22 eV. The hole carrier concentration of the CuCrO2 film increased from 5.1 x 10(14) to 2.2 x 10(17) cm(-3) upon doping with 5 at% Ni. Based on Hall measurement and X-ray photoelectron spectroscopy results, it was suggested that the substituted Ni2+ dopants at Cr3+ sites formed an acceptor level without any charge compensation with Cu2+ and/or Cr4+.
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