Enhanced dielectric and energy -storage properties in ZnO-doped 0.9(0.94Na(0.5)Bi(0.5)TiO(3)-0.06BaTiO(3))-0.1NaNbO(3) ceramics

[0.9(0.94Na(0.5)Bi(0.5)TiO(3)- 0.06BaTiO(3))- 0.1NaNbO(3)]-xZnO (NBT-BT-NN-xZnO, x = 0, 0.5 wt%, 1.0 wt%, 1.5 wt %, and 2.0 wt%) ferroelectric ceramics were fabricated using a conventional solid-state reaction method. The effects of ZnO content on dielectric, energy-storage and discharge properties were systematically investigated. Dielectric constant and difference between maximum and remanent polarization were significantly improved by ZnO doping. Dielectric constant of NBT-BT-NN-1.0-wt% ZnO was 3218 at 1 kHz and room temperature, i.e. one time bigger than that of pure NBT-BT-NN ceramic. As a consequence, a maximum energy-storage density of 1.27 J/cm(3) with a corresponding efficiency of 67% was obtained in NBT-BT-NN-1.0-wt% ZnO ceramic. Moreover, its pulsed discharge energy density was 1.17 J/cm(3), and 90% of which could be released in less than 300 ns. Therefore, ZnO doped NBT-BT-NN ceramic with a large energy-storage density and short release time could be a potential candidate for applications in high energy-storage capacitors.