Journal
CARBON
Volume 129, Issue -, Pages 520-526Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2017.12.053
Keywords
Graphene/Si Schottky junction solar cell; s-Shaped kink; Deep UV treatment; Texturing process
Funding
- Higher Committee for Education Development in Iraq [D-11-2969]
- Higher Committee for Education Development in Iraq [D-11-2969]
- Engineering and Physical Sciences Research Council [EP/M006301/1] Funding Source: researchfish
- EPSRC [EP/M006301/1] Funding Source: UKRI
Ask authors/readers for more resources
A graphene/Si Schottky junction solar cell is commonly fabricated by using the top-window structure. However, reported devices have many drawbacks such as a small active area of 0.11 cm(2), s-shape in the J-V curves, recombination process of charge carriers at the graphene/textured Si interface, high cost and a complex fabrication process. Here, we report a novel graphene/Si Schottky junction solar cell with a back contact-structure, which has benefits of a simpler fabrication process, lower fabrication cost, and larger active area in comparison with a device fabricated with the previous structure. Additionally, we found that the PMMA residue left on graphene surfaces is the key to eliminate the s-shape in the J-V curves. Thus, the deep UV treatment of the CVD graphene is applied within the wet transfer process to effectively remove the PMMA residue, suppress the behavior of s-shaped kink in J-V curves and enhance the solar cell efficiency. As a result, the recorded power conversion efficiency of 10% is achieved for graphene/ textured Si devices without chemical doping and anti-reflection coating, and this value is improved to 14.1% after applying chemical doping. Doped devices also show great stability and retain 84% of the efficiency after 9 days storage in air. (C) 2018 The Authors. Published by Elsevier Ltd.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available