Journal
CARBON
Volume 135, Issue -, Pages 195-201Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2018.04.047
Keywords
-
Funding
- Ministry of Science and Technology of China [2016YFA0200101]
- National Natural Science Foundation of China [51625203, 51532008, 51521091, 51572264, 51772303]
- Chinese Academy of Sciences [174321KYSB20160011, KGZD-EW-T06]
- CAS/SAFEA International Partnership Program for Creative Research Teams
- Liaoning BaiQianWan Talents Program
Ask authors/readers for more resources
Semiconducting single-wall carbon nanotubes (s-SWCNTs) without metal impurities are highly desired for use in high-performance field effect transistors as a channel material. Here we use SiC nanoparticles as a catalyst to selectively grow s-SWCNTs. The Si atoms on the surface of the SiC nanoparticles are found to be depleted during thermal treatment, and carbon atoms are exposed, which leads to the formation of carbon nanocaps on the SiC nanoparticles. Under a hydrogen atmosphere, the chemically active metallic carbon caps are preferentially etched away so that high purity s-SWCNTs with a content of similar to 95% without any residue metal impurities are obtained by the chemical vapor deposition of ethanol and can be used to fabricate high-performance thin film transistors. (C) 2018 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available