Journal
APPLIED SURFACE SCIENCE
Volume 427, Issue -, Pages 609-612Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2017.08.210
Keywords
g-GaN; Adsorption; Spintronics; Half-metal; Room-temperature ferromagnetism; First-principles calculation
Categories
Funding
- Ministry of Science and Technology of China [2016ZX04004008]
- Scientific Research Foundation of Graduate School of Southeast University [YBPY1602]
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The electronic and magnetic properties of graphene-like gallium nitride (g-GaN) with adsorbed H, B, C, N, O, and F atoms were investigated using spin-polarized first-principles calculations. We found that H, B, C, N, O, and F atoms can be chemisorbed on a g-GaN monolayer. The total magnetic moments of 1.0, 2.0, 1.0, and 1.0 mu(B) are founded in B-, C-, N-, and F-adsorbed g-GaN monolayers, respectively. In addition, a half-metallic state appears in the N- and F-adsorbed g-GaN, while a spin-polarized semiconducting state appears in other g-GaN monolayers after the adsorption of B or C. These findings demonstrate that the magnetic properties of g-GaN can be effectively tuned by the adsorption of non-metal atoms. In particular, the F-adsorbed system that exhibits a half-metallic state and high Curie temperature of 367 K has great potential for application in spintronics. (C) 2017 Elsevier B.V. All rights reserved.
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