Journal
APPLIED SURFACE SCIENCE
Volume 440, Issue -, Pages 637-642Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2018.01.196
Keywords
GaN; Band bending; Surface state; ADXPS; Oxygen-containing absorbate
Categories
Funding
- National Natural Science Foundation of China [61674165, 61604167, 61574160, 61704183, 61404159, 11604366]
- Natural Science Foundation of Jiangsu Province [BK20170432, BK20160397, BK20140394]
- National Key R&D Program of China [2016YFB0401803]
- Strategic Priority Research Program of the Chinese Academy of Science [XDA09020401]
- Youth Innovation Promotion Association of Chinese Academy of Sciences [2017370]
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Surface band bending and composition of Ga-polar n-GaN with different surface treatments were characterized by using angular dependent X-ray photoelectron spectroscopy. Upward surface band bending of varying degree was observed distinctly upon to the treatment methods. Besides the nitrogen vacancies, we found that surface states of oxygen-containing absorbates (O-H component) also contribute to the surface band bending, which lead the Fermi level pined at a level further closer to the conduction band edge on n-GaN surface. The n-GaN surface with lower surface band bending exhibits better linear electrical properties for Ti/GaN Ohmic contacts. Moreover, the density of positively charged surface states could be derived from the values of surface band bending. (C) 2018 Elsevier B.V. All rights reserved.
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