Journal
APPLIED SURFACE SCIENCE
Volume 443, Issue -, Pages 421-428Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2018.02.225
Keywords
MoS2; Two-dimensional materials; Field-effect transistors; Atomic layer deposition (ALD); High-K gate dielectrics
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Funding
- Taiwan Semiconductor Manufacturing Company (TSMC)
- Ministry of Science and Technology, Taiwan [MOST 106-2622-8-002-001]
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Sub-10 nm high-K gate dielectrics are of critical importance in two-dimensional transition metal dichalcogenides (TMDs) transistors. However, the chemical inertness of TMDs gives rise to a lot of pinholes in gate dielectrics, resulting in large gate leakage current. In this study, sub-10 nm, uniform and pinhole-free Al2O3 high-K gate dielectrics on MoS2 were achieved by atomic layer deposition without surface functionalization, in which an ultrathin Al2O3 layer prepared with a short purge time at a low temperature of 80 degrees C offers the nucleation cites for the deposition of the overlaying oxide at a higher temperature. Conductive atomic force microscopy reveals the significant suppression of gate leakage current in the sub-10 nm Al2O3 gate dielectrics with the low-temperature nucleation layer. Raman and X-ray photoelectron spectroscopies indicate that no oxidation occurred during the deposition of the low-temperature Al2O3 nucleation layer on MoS2. With the high-quality sub-10 nm Al2O3 high-K gate dielectrics, low hysteresis and subthreshold swing were demonstrated on the normally-off top-gated MoS2 transistors. (C) 2018 Elsevier B.V. All rights reserved.
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