Direct modulation of a single InP/InAs nanowire light-emitting diode

Telecom-band single nanowire (NW) light-emitting diodes (LEDs) on silicon platforms are promising for use as future on-chip light sources. To realize such an LED, we grew p-i-n junction InP/InAs NWs by the vapor-liquid-solid method and used them to fabricate single NW-LED composites on Si wafers. Using a micro-photoluminescence system and a current injection probe setup, we were able to estimate the optical and electrical properties. In addition, we demonstrated the dynamic signal modulation capabilities of our device through a digital eye diagram with a pseudo-random binary sequence signal. This telecom-band single NW-LED employing Gbps signal modulation has the potential for use as an on-chip light source. Published by AIP Publishing.