Room temperature operation of InxGa1-xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD

We demonstrate room temperature operation of In0.5Ga0.5Sb/InAs type-II quantum well photodetectors on an InAs substrate grown by metal-organic chemical vapor deposition. At 300K, the detector exhibits a dark current density of 0.12A/cm(2) and a peak responsivity of 0.72 A/W corresponding to a quantum efficiency of 23.3%, with the calculated specific detectivity of 2.4 x 10(9) cm Hz(1/2)/W at 3.81 mu m. Published by AIP Publishing.