4.6 Article

Polarization retention in ultra-thin barium titanate films on Ge(001)

Journal

APPLIED PHYSICS LETTERS
Volume 112, Issue 16, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.5020549

Keywords

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Funding

  1. Robert Welch Foundation [F-1038]
  2. Air Force Office of Scientific Research [FA9550-14-1-0090, FA9550-12-10494]
  3. NSF Division of Materials Research Award [1707372]

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We investigate polarization retention in 10 to 19 nm thick ferroelectric BaTiO3 (BTO) grown on Ge(001) by molecular beam epitaxy. The out-of-plane direction and reversibility of electric polarization were confirmed using piezoresponse force microscopy. After reverse-poling selected regions of the BTO films to a value P with a biased atomic-force microscope tip, we monitored relaxation of their net polarization for as long as several weeks using optical second-harmonic generation microscopy. All films retained reversed polarization throughout the observation period. 10 nm-thick BTO films relaxed monotonically to a saturation value of 0.9 P after 27 days and 19 nm films to 0.75 P after 24 h. Polarization dynamics are discussed in the context of a 1D polarization relaxation/kinetics model. Published by AIP Publishing.

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