Journal
APPLIED PHYSICS LETTERS
Volume 112, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5020679
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Funding
- National Natural Science Foundation of China [51677033, 51471057]
- Research Project of the Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education [2016004]
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Sr-x(Na0.5Bi0.5)(1-x)Ti0.99Mn0.01O3 (x = 0.2, 0.4, 0.6, and 0.8) relaxor ferroelectric thin films were grown on Pt/Ti/SiO2/Si substrates by the Sol-Gel method. The influence of the Sr content on the microstructures, ferroelectric properties, and energy-storage performances of the thin films were investigated in detail. The Sr-0.6(Na0.5Bi0.5)(0.4)Ti0.99Mn0.01O3 thin film exhibits very slim hysteresis loops with the highest electric breakdown field strength due to reduced oxygen vacancies. Owing to the high breakdown field strength of 3134.3 kV/cm, the Sr-0.6(Na0.5Bi0.5)(0.4)Ti0.99Mn0.01O3 thin film shows a giant recoverable energy-storage density of 33.58 J/cm(3). These results indicate that the Sr-0.6(Na0.5Bi0.5)(0.4)Ti0.99Mn0.01O3 thin film is promising for applications of advanced capacitors with high energy-storage density. Published by AIP Publishing.
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