Journal
APPLIED PHYSICS LETTERS
Volume 112, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5022049
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Funding
- Swedish Foundation for Strategic Research (SSF)
- Swedish Research Council (VR)
- Knut and Alice Wallenberg Foundation (KAW)
- European Research Council (ERC) under the European Community/ERC [307144]
- European Research Council (ERC) [307144] Funding Source: European Research Council (ERC)
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We demonstrate low-operational-current W/Co20Fe60B20/MgO spin Hall nano-oscillators (SHNOs) on highly resistive silicon (HiR-Si) substrates. Thanks to a record high spin Hall angle of the beta-phase W (theta(SH) = -0.53), a very low threshold current density of 3.3 x 10(7) A/cm(2) can be achieved. Together with their very wide frequency tunability (7-28GHz), promoted by a moderate perpendicular magnetic anisotropy, HiR-Si/W/CoFeB based SHNOs are potential candidates for wide-band microwave signal generation. Their CMOS compatibility offers a promising route towards the integration of spintronic microwave devices with other on-chip semiconductor microwave components. Published by AIP Publishing.
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