Journal
APPLIED PHYSICS LETTERS
Volume 112, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5021077
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Funding
- Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA) [W911NF-14-C0089]
- Cornell Center for Materials Research
- NSF MRSEC program [DMR-1719875]
- National Science Foundation [ECCS-1542081]
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Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here, we directly demonstrate the usefulness of this strategy by fabricating prototype 3-terminal in-plane-magnetized magnetic tunnel junctions that utilize the spin Hall torque from a Pt85Hf15 alloy and measuring the critical currents for switching. We find that Pt85Hf15 reduces the switching current densities compared to pure Pt by approximately a factor of 2 for both quasi-static ramped current biases and nanosecond-scale current pulses, thereby proving the feasibility of this approach in assisting the development of efficient embedded magnetic memory technologies. Published by AIP Publishing.
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