Journal
APPLIED PHYSICS LETTERS
Volume 112, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5023596
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Funding
- U.S. Department of Energy (DOE) Office of Science [DE-AC52-06NA25396, DE-NA-0003525]
- Interdepartmental Doctoral Degree Program for Multi-dimensional Materials Science Leaders at Tohoku University
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We demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si0.8Ge0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication [Lu et al., Appl. Phys. Lett. 109, 093102 (2016)]. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two inplane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of similar to 2% in the sensor current.
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