Journal
APPLIED PHYSICS LETTERS
Volume 112, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5025607
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Funding
- National Natural Science Foundation of China [U1632122, 11774172, 11721404]
- Fundamental Research Funds for the Central Universities [NE2016102, NP2017103]
- EPSRC [EP/K035282/1, EP/N004272/1]
- Isaac Newton Trust [13.38(k)]
- Chinese Government 1000-Young Talent Program
- U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
- U.S. National Science Foundation hinese Government 1000-Young Talent Program. The oxygen measurement was supported by the Center for Integrated Nanotechnologies (CINT), a DOE nanoscience user facility jointly operated by Los Alamos and Sandia Nati [DMR-1643911]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1643911] Funding Source: National Science Foundation
- EPSRC [EP/H047867/1, EP/K035282/1, EP/N004272/1] Funding Source: UKRI
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Dielectric relaxation in ABO(3) perovskite oxides can result from many different charge carrier-related phenomena. Despite a strong understanding of dielectric relaxations, a detailed investigation of the relationship between the content of oxygen vacancies (V-o) and dielectric relaxation has not been performed in perovskite oxide films. In this work, we report a systematic investigation of the influence of the V-o concentration on the dielectric relaxation of Eu0.5Ba0.5TiO3-delta epitaxial thin films. Nuclear resonance backscattering spectrometry was used to directly measure the oxygen con- centration in Eu0.5Ba0.5TiO3-delta films. We found that dipolar defects created by V-o interact with the off-centered Ti ions, which results in the dielectric relaxation in Eu0.5Ba0.5TiO3-delta films. Activation energy gradually increases with the increasing content of V-o. The present work significantly extends our understanding of relaxation properties in oxide films. Published by AIP Publishing.
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