Journal
APPLIED PHYSICS LETTERS
Volume 112, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5008632
Keywords
-
Categories
Funding
- Japan Society for the Promotion of Science (JSPS) [26420673]
- Joint Research Program on Zero-Emission Energy Research, Institute of Advanced Energy, Kyoto University
- Inter-University Cooperative Research Program of the Institute for Materials Research, Tohoku University
- Cooperative Research Project of the Research Institute of Electronics, Shizuoka University
- Futaba Electronic Memorial Foundation
- Grants-in-Aid for Scientific Research [17H06159, 16H05986, 26420673] Funding Source: KAKEN
Ask authors/readers for more resources
The energy levels of electron traps (namely, defect complexes associated with oxygen vacancies) in Gd3Al2Ga3O12:Ce (GAGG:Ce) were studied at 12K using mid-infrared (MIR) light pulses from a free-electron laser (FEL) as the probe light. Ce3+ 5d-4f luminescence was stimulated by the MIR light pulse following an ultraviolet light pulse. Stimulation of Ce3+ 5d-4f luminescence by MIR light pulses was pronounced above 0.31 eV. This result is consistent with that of previous work based on a trap-mediated luminescence model. It is concluded that the electron trap levels are located 0.31 eV below the bottom of the conduction band. This study demonstrates that MIR-FEL is applicable for the determination of hidden electron trap levels. Published by AIP Publishing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
