Journal
APPLIED PHYSICS LETTERS
Volume 112, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5029327
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Funding
- KAKENHI [15H04113]
- JSPS
- KPFK under the Japan-Korea Basic Scientific Cooperation Program
- Kato Foundation for Promotion of Science
- Grants-in-Aid for Scientific Research [15H04113] Funding Source: KAKEN
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Phase-change random access memory (PCRAM) is enabled by a large resistance contrast between amorphous and crystalline phases upon reversible switching between the two states. Thus, great efforts have been devoted to identifying potential phase-change materials (PCMs) with large electrical contrast to realize a more accurate reading operation. In contrast, although the truly dominant resistance in a scaled PCRAM cell is contact resistance, less attention has been paid toward the investigation of the contact property between PCMs and electrode metals. This study aims to propose a non-bulk-resistance-dominant PCRAM whose resistance is modulated only by contact. The contact-resistance-dominated PCM exploited here is N-doped Cr2Ge2Te6 (NCrGT), which exhibits almost no electrical resistivity difference between the two phases but exhibits a typical switching behavior involving a three-order-of-magnitude SET/RESET resistance ratio owing to its large contact resistance contrast. The conduction mechanism was discussed on the basis of current-voltage characteristics of the interface between the NCrGT and the W electrode. Published by AIP Publishing.
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