Journal
APPLIED CATALYSIS B-ENVIRONMENTAL
Volume 238, Issue -, Pages 6-18Publisher
ELSEVIER
DOI: 10.1016/j.apcatb.2018.07.011
Keywords
Boron nitride; Semiconductor photocatalysis; Immigration of electrons and holes; Pollutant degradation
Funding
- Program for the National Natural Science Foundation of China [51579098, 51779090, 51709101, 51278176, 51521006, 51378190, 51408206, 51508177]
- National Program for Support of Top-Notch Young Professionals of China (2014)
- Fundamental Research Funds for the Central Universities
- Hunan Provincial Science and Technology Plan Project [2016RS3026, 2017SK2243]
- Program for Changjiang Scholars and Innovative Research Team in University [IRT-13R17]
- Fundamental Research Funds for the Central Universities [531107050978, 531107051080]
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Semiconductor photocatalysis has been regarded as one of promising approach to solve the environmental pollution and energy crisis. Boron nitride (BN), as a new nanomaterial, has distinct structures and properties that can add attractive properties to photocatalysts. In the past few years, many encouraging achievements have been made in the research field of BN-based semiconductor photocatalysts. Semiconductor/BN composites have attracted extensive attention due to its well photocatalytic activity. This work summarized recent progress on the synthesis of BN and semiconductor/BN composites. These semiconductor/BN composites have various applications in photocatalytic fields, such as pollutant degradation and photocatalytic hydrogen evolution. The role of BN in semiconductor/BN composites is discussed in depth. Coupling BN with semiconductors can improve the photocatalytic activity of semiconductors due to their surface charge transfer properties. The photocatalytic mechanisms and different types of photocatalysts are studied. Furthermore, perspectives on semiconductor/BN composites are discussed, including the challenges for large scale preparations and theoretical calculation of composites. It is expected that this review would be helpful for designing of highly efficient semiconductor/BN composites.
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