Journal
ADVANCED MATERIALS
Volume 30, Issue 27, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201706527
Keywords
Ag SHINs; gap-mode; MoS2; photodetector; PL
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Funding
- National Natural Science Foundation of China [51202216, 51502264, 61774135]
- Special Foundation of Young Professor of Zhejiang University [2013QNA5007]
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2D materials hold great potential for designing novel electronic and optoelectronic devices. However, 2D material can only absorb limited incident light. As a representative 2D semiconductor, monolayer MoS2 can only absorb up to 10% of the incident light in the visible, which is not sufficient to achieve a high optical-to-electrical conversion efficiency. To overcome this shortcoming, a gap-mode plasmon-enhanced monolayer MoS2 fluorescent emitter and photodetector is designed by squeezing the light-field into Ag shell-isolated nanoparticles-Au film gap, where the confined electromagnetic field can interact with monolayer MoS2. With this gap-mode plasmon-enhanced configuration, a 110-fold enhancement of photoluminescence intensity is achieved, exceeding values reached by other plasmon-enhanced MoS2 fluorescent emitters. In addition, a gap-mode plasmon-enhanced monolayer MoS2 photodetector with an 880% enhancement in photocurrent and a responsivity of 287.5 A W-1 is demonstrated, exceeding previously reported plasmon-enhanced monolayer MoS2 photodetectors.
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