Low-Temperature Heteroepitaxy of 2D PbI2/Graphene for Large-Area Flexible Photodetectors

Heterostructures based on graphene and other 2D atomic crystals exhibit fascinating properties and intriguing potential in flexible optoelectronics, where graphene films function as transparent electrodes and other building blocks are used as photoactive materials. However, large-scale production of such heterostructures with superior performance is still in early stages. Herein, for the first time, the preparation of a submeter-sized, vertically stacked heterojunction of lead iodide (PbI2)/graphene on a flexible polyethylene terephthalate (PET) film by vapor deposition of PbI2 on graphene/PET substrate at a temperature lower than 200 degrees C is demonstrated. This film is subsequently used to fabricate bendable graphene/PbI2/graphene sandwiched photodetectors, which exhibit high responsivity (45 A W-1 cm(-2)), fast response (35 mu s rise, 20 mu s decay), and high-resolution imaging capability (1 mu m). This study may pave a facile pathway for scalable production of high-performance flexible devices.