4.6 Article

Enhanced spin-polarization lifetimes in a two-dimensional electron gas in a gate-controlled GaAs quantum well

Journal

PHYSICAL REVIEW B
Volume 94, Issue 3, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.94.035303

Keywords

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Funding

  1. Deutsche Forschungsgemeinschaft (DFG) [ICRC-TRR 160]
  2. NSF DMR Grant [1306878]
  3. Welch Foundation [F-1662]
  4. Division Of Materials Research
  5. Direct For Mathematical & Physical Scien [1306878] Funding Source: National Science Foundation

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Exciton, trion, and electron spin dynamics in a 20-nm-wide modulation-doped GaAs single quantum well are investigated using resonant ultrafast two-color Kerr rotation spectroscopy. Excitons and trions are selectively detected by resonant probe pulses while their relative spectral weight is controlled by adjusting the gate voltage which tunes the carrier density. Tuning the carrier density markedly influences the spin decay time of the two-dimensional electron gas. The spin decay time can be enhanced by a factor of 3 at an intermediate carrier concentration in the quantum well where excitons and trions coexist in the system. In addition, we explore the capability to tune the g factor of the electron gas via the carrier density.

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