Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 28, Issue 28, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201801710
Keywords
electrical breakdown; electromigration; molecular electronics; tunnel junction; wind force
Categories
Funding
- Ministry of Education (MOE) [MOE2015-T2-2-134]
- Prime Minister's Office, Singapore under its Medium-Sized Centre program
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The origin of electrical breakdown of molecular tunnel junctions is systematically studied by determination of the breakdown voltages as a function of six types of bottom-electrodes (Au, Ag, Pt, Pd, Ni, and Cu) and different thickness of self-assembled monolayers of n-alkanethiolates, S(CH2)(n-1)CH3 with n = 2, 4, ..., 18, with GaOx/EGaIn top contacts. It is found that at positive bias, the migration of metallic atoms is dominated by the wind force, but, at negative bias, both the wind force and direct force are involved in the mechanism of filament formation. Remarkably, the breakdown voltage is independent of the molecular length for short molecules (n < 10), and the breakdown field could be improved by a factor of approximate to 2 from 0.80 to 1.5 GV m(-1) by replacing the Ag with Pt (or Ni) bottom electrodes. These findings give insights into the design of stable molecular junctions.
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