Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 28, Issue 22, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201800339
Keywords
infrared response; interlayer coupling; photodetection; surface plasmon resonance; WS2/MoS2 heterostructures
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Funding
- National Basic Research Program of China [2015CB932600]
- Analytical and Testing Center in Huazhong University of Science and Technology
- National Key Research and Development Program of Strategic Advanced Electronic Materials [2016YFB0401100]
- Fundamental Research Funds for the Central University [2017KFKJXX007, 2015ZDTD038]
- National Nature Science Foundation of China [51472097, 51727809, 21501060, 91622117]
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Infrared light detection is generally limited by the intrinsic bandgap of semiconductors, which suppresses the freedom in infrared light photodetector design and hinders the development of high-performance infrared light photodetector. In this work, for the first time infrared light (1030 nm) photodetectors are fabricated based on WS2/MoS2 heterostructures. Individual WS2 and MoS2 have no response to infrared light. The origin of infrared light response for WS2/MoS2 comes from the strong interlayer coupling which shrinks the energy interval in the heterojunction area thus rendering heterostructures longer wavelength detection ability compared to individual components. Considering the low light absorption due to indirect bandgap essence of few layers WS2/MoS2 heterostructures, its infrared responsivity is further enhanced with at most approximate to 25 times but the fast response rate is maintained via surface plasmon resonance (SPR). Such an interlayer coupling induced infrared light response and surface plasmon resonance enhancement strategy paves the way for high-performance infrared light photodetection of infinite freedom in design.
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