Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 28, Issue 11, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201706448
Keywords
CoFeB discs; electric-field control of magnetism; ferroelectric domain switching; multiferroic heterostructures
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Funding
- 973 project of the Ministry of Science and Technology of China [2015CB921402]
- National Science Foundation of China [11434014, 51572150, 51332001, 11604384, 11704388]
- Science Center of National Science Foundation of China [51788104]
- State Key Laboratory of Low-Dimensional Quantum Physics [ZZ201701, KF201717]
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Electric-field control of magnetism in ferromagnetic/ferroelectric multiferroic heterostructures is a promising way to realize fast and nonvolatile random-access memory with high density and low-power consumption. An important issue that has not been solved is the magnetic responses to different types of ferroelectric-domain switching. Here, for the first time three types of magnetic responses are reported induced by different types of ferroelectric domain switching with in situ electric fields in the CoFeB mesoscopic discs grown on PMN-PT(001), including type I and type II attributed to 109 degrees, 71 degrees/180 degrees ferroelectric domain switching, respectively, and type III attributed to a combined behavior of multiferroelectric domain switching. Rotation of the magnetic easy axis by 90 degrees induced by 109 degrees ferroelectric domain switching is also found. In addition, the unique variations of effective magnetic anisotropy field with electric field are explained by the different ferroelectric domain switching paths. The spatially resolved study of electric-field control of magnetism on the mesoscale not only enhances the understanding of the distinct magnetic responses to different ferroelectric domain switching and sheds light on the path of ferroelectric domain switching, but is also important for the realization of low-power consumption and high-speed magnetic random-access memory utilizing these materials.
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