Journal
ACTA MATERIALIA
Volume 155, Issue -, Pages 214-221Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2018.06.020
Keywords
Persistent luminescence; Near-infrared; First-principles; Antisite defects; Energy storage
Funding
- National Natural Science Foundation of China [61274140, 61306003]
- Natural Science Foundation of Guangdong Province [2015A030313871]
- Distinguished Young Teacher Training Program in Higher Education of Guangdong [YQ2015112]
- Young Talents in Higher Education of Guangdong, China
Ask authors/readers for more resources
We present novel near-infrared (NIR) Cr3+-doped non-gallate super-long-persistence phosphors (Zn1+xAl2-2xGexO4:Cr3+) by Germanium substitution in the original ZnAl2O4:Cr3+. Unlike the negligible NIR persistent luminescence of ZnAl2O4:Cr3+ upon UV or visible light excitation, the Ge substituted phosphors feature strong and super-long-persistent luminescence at approximately 650-750 nm for more than 120 h. The relation between the Ge substitution and the defect trapping states is investigated systematically. The experimental results combined with the first-principles calculations reveal that Ge-Zn(OO center dot) and Ge-Al(O center dot) in the spinel structure would introduce shallow and deep defect states in the band gap to serve as new efficient traps, which are mainly responsible for the strong and super-long-persistent luminescence upon UV or visible light excitation. The present advanced phosphors is an alternative candidate for applications in biomedical imaging and night-vision surveillance. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available