Journal
ACS NANO
Volume 12, Issue 2, Pages 1696-+Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.7b08350
Keywords
ZrTe2; semimetal; massless Dirac Fermions; molecular beam van der Waals epitaxy; moire pattern; 2D materials
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Funding
- French Recherches Technologiques de Base program
- Greek State Scholarships Foundation (IKY) Program for the strengthening of postdoctoral research
- Universite Grenoble Alpes
- French state funds [ANR-10-LABX-51-01, Equipex ANR-11-EQPX-0010]
- LabEx Minos [ANR-10-LABX-55-01]
- CEA
- French RENATECH program
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Single and few layers of the two-dimensional (2D) semimetal ZrTe2 are grown by molecular beam epitaxy on InAs(111)/Si(111) substrates. Excellent rotational commensurability, van der Waals gap at the interface and moire pattern are observed indicating good registry between the ZrTe2 epilayer and the substrate through weak van der Waals forces. The electronic band structure imaged by angle resolved photoelectron spectroscopy shows that valence and conduction bands cross at the Fermi level exhibiting abrupt linear dispersions. The latter indicates massless Dirac Fermions which are maintained down to the 2D limit suggesting that single-layer ZrTe2 could be considered as the electronic analogue of graphene.
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