Journal
ACS NANO
Volume 12, Issue 3, Pages 2948-2954Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.8b00580
Keywords
CS-FET; electrostatic confinement; CMOS gas sensors; tunable sensitivity; low power; charge inversion layer
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Funding
- Bakar Fellows Program
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There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a litmus test, we demonstrate large sensor responses (>1000%) to 0.5% H-2 gas, with fast response (<60 s) and recovery times (< 120 s) at room temperature and low power (< 50 mu W). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.
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