Journal
ACS NANO
Volume 12, Issue 5, Pages 4624-4629Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.8b01094
Keywords
light-emitting field-effect transistors; quantum dot; solution-processed; oxide semiconductor; low temperature
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Funding
- National Natural Science Foundation of China [51673068]
- National Key Research and Development Program of China [2016YFB0401105]
- Guangdong Natural Science Foundation [2017A030306007]
- Fundamental Research Funds for the Central Universities
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Light-emitting field-effect transistors (LEFETs) have attained great attention due to their special characteristics of both the switching capacity and the electroluminescence capacity. However, high-performance LEFETs with high mobility, high brightness, and high efficiency have not been realized due to the difficulty in developing high electron and hole mobility materials with suitable band structures. In this paper, quantum dot hybrid LEFETs (QD-HLEFETs) combining high-luminous-efficiency quantum dots (QDs) and a solution-processed scandium-incorporated indium oxide (Sc:In2O3) semiconductor were demonstrated. The red QD-HLEFET showed high electrical and optical performance with an electron mobility of 0.8 cm(2) V-1 s(-1) a maximum brightness of 13 400 cd/m(2), and a maximum external quantum efficiency of 8.7%. The high performance of the QD-HLEFET is attributed to the good energy band matching between Sc:In2O3 and QDs and the balanced hole and electron injection (less exciton nonradiative recombination). In addition, incorporation of Sc into In2O3 can suppress the oxygen vacancy and free carrier generation and brings about excellent current and optical modulation (the on/off current ratio is 10(5) and the on/off brightness ratio is 10(6)).
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