Journal
ACS NANO
Volume 12, Issue 5, Pages 4727-4735Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.8b01387
Keywords
transparent; flexible; silicon nanostructured wire network; photodetector; porous silicon
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Funding
- Technical Research Centre (TRC), IACS, Kolkata [AI/1/62/IACS/2015]
- Science and Engineering Research Board (SERB), India [ECR/2017/003264, EMR/2014/000664]
- European Research Council [321160]
- Science Foundation Ireland (SFI) [12/IA/1482]
- DST INSPIRE Programme
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Optically transparent photodetectors are crucial in next generation optoelectronic applications including smart windows and transparent image sensors. Designing photodetectors with high transparency, photoresponsivity, and robust mechanical flexibility remains a significant challenge, as is managing the inevitable trade-off between high transparency and strong photoresponse. Here we report a scalable method to produce flexible crystalline Si nanostructured wire (NW) networks fabricated from silicon-on-insulator (SOI) with seamless junctions and highly responsive porous Si segments that combine to deliver exceptional performance. These networks show high transparency (similar to 92% at 550 nm), broadband photo detection (350 to 950 nm) with excellent responsivity (25 A/W), optical response time (0.58 ms), and mechanical flexibility (1000 cycles). Temperature-dependent photocurrent measurements indicate the presence of localized electronic states in the porous Si segments, which play a crucial role in light harvesting and photocarrier generation. The scalable low-cost approach based on SOI has the potential to deliver new classes of flexible optoelectronic devices, including next-generation photodetectors and solar cells.
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