Journal
ACS NANO
Volume 12, Issue 3, Pages 2319-2331Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.7b07446
Keywords
van der Waals interaction; band-gap opening; heterojunction; few-layer graphene; MoSe2; commensurability; charge transfer
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Funding
- CEA-project 2D FACTORY Agence Nationale de la Recherche within the ANR MoS2ValleyControl, 2D Transformers contracts
- French state fund LANEF [ANR-10-LABX-51-01]
- The French state fund Equipex [ANR-11-EQPX-0010, ANR-J2D]
- EC Graphene Flagship project [604391]
- CEA-Enhanced Eurotalents program
- French supercomputers GENCI-CINES [6194]
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Van der Waals heterojunctions composed of graphene and transition metal dichalcogenides have gain much attention because of the possibility to control and tailor band structure, promising applications in two-dimensional optoelectronics and electronics. In this report, we characterized the van der Waals heterojunction MoSe2/few-layer graphene with a high-quality interface using cutting-edge surface techniques scaling from atomic to microscopic range. These surface analyses gave us a complete picture of the atomic structure and electronic properties of the heterojunction. In particular, we found two important results: the commensurability between the MoSe2 and few-layer graphene lattices and a band-gap opening in the few-layer graphene. The band gap is as large as 250 meV, and we ascribed it to an interface charge transfer that results in an electronic depletion in the few-layer graphene. This conclusion is well supported by electron spectroscopy data and density functional theory calculations. The commensurability between the MoSe2 and graphene lattices as well as the band-gap opening clearly show that the interlayer interaction goes beyond the simple van der Waals interaction. Hence, stacking two-dimensional materials in van der Waals heterojunctions enables us to tailor the atomic and electronic properties of individual layers. It also permits the introduction of a band gap in few-layer graphene by interface charge transfer.
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