Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 12, Pages 9900-9903Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b01116
Keywords
7-AGNRs; back-gated field-effect transistors; bandgap; graphene nanoribbons; mobility
Funding
- ERC [648589, 307311]
- DFG [CRC 1238, GR 3708/2-1, LE 2440/2-1]
- European regional funds grant [NW-1-1-036b]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0010409]
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We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum I-ON/I-OFF current ratio of 87.5.
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