Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 2, Pages 1819-1827Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b14759
Keywords
stiffness modulation; electric field bias; piezoelectric thin film; aluminum nitride; film bulk acoustic resonator; atomic interaction
Funding
- National Key Research and Development Program of China [2016YFB0402702]
- National Natural Science Foundation of China [51605060]
- Fundamental Research Funds for the Central Universities [106112016CDJZR125504]
- Ministry of Education of the People's Republic of China
- thousands talents program for the pioneer researcher and his innovation team, China
Ask authors/readers for more resources
Aluminum nitride offers unique material advantages for the realization of ultrahigh-frequency acoustic devices attributed to its high ratio of stiffness to density, compatibility with harsh environments, and superior thermal properties. Although, to date, aluminum nitride thin films have been widely investigated regarding their electrical and mechanical characteristics under alternating small signal excitation, their ultrathin nature under large bias may also provide novel and useful properties. Here, we present a comprehensive investigation of electric field stiffening effect in c-oriented aluminum nitride piezoelectric thin films. By analyzing resonance characteristics in a 2.5 GHz aluminum nitride-based film bulk acoustic resonator, we demonstrate an up to 10% linear variation in the equivalent stiffness of aluminum nitride piezoelectric thin films when an electric field was applied from -150 to 150 MV/m along the c-axis. Moreover, for the first time, an atomic interaction mechanism is proposed to reveal the nature of electric field stiffening effect, suggesting that the nonlinear variation of the interatomic force induced by electric field modulation is the intrinsic reason for this phenomenon in aluminum nitride piezoelectric thin films. Our work provides vital experimental data and effective theoretical foundation for electric field stiffening effect in aluminum nitride piezoelectric thin films, indicating the huge potential in tunable ultrahigh-frequency microwave devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available