Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 25, Pages 21061-21065Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b05229
Keywords
stannates perovskite; MBE; defects; trap density; FET; high mobility
Funding
- Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) [FA9550-16-1-0205]
- UMN MRSEC program [DMR-1420013]
- NSF [DMR-1741801]
- NSF through the MRSEC program
- UMN Doctoral Dissertation Fellowship
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[Graphics] The high room-temperature mobility that can be achieved in BaSnO3 has created significant excitement for its use as channel material in all-perovskite-based transistor devices such as ferroelectric field effect transistor (FET). Here, we report on the first demonstration of n-type depletion-mode FET using hybrid molecular beam epitaxy grown La-doped BaSnO3 as a channel material. The devices utilize a heterostructure metal-oxide semiconductor FET (MOSFET) design that includes an epitaxial SrTiO3 barrier layer capped with a thin layer of HfO2 used as a gate dielectric. A field-effect mobility of similar to 70 cm(2) V-1 s(-1), a record high transconductance value of >2mS/mm at room temperature, and the on/off ratio exceeding 107 at 77 K were obtained. Using temperature- and frequency-dependent transport measurements, we quantify the impact of the conduction band offset at the BaSnO3/SrTiO3 interface as well as bulk and interface traps on device characteristics.
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