Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 25, Pages 21472-21480Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b05036
Keywords
organic synaptic device; photon; organic field-effect transistor; interfacial charge trapping effect; memory and learning behavior
Funding
- Science AMP
- Technology Foundation of Shanghai [17JC1404600]
- National Key Research and Development Program of China [2017YFA0103904]
- National Natural Science Foundation of China [51741302]
- Fundamental Research Funds for the Central Universities
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Synaptic transistors stimulated by light waves or photons may offer advantages to the devices, such as wide bandwidth, ultrafast signal transmission, and robustness. However, previously reported light-stimulated synaptic devices generally require special photoelectric properties from the semiconductors and sophisticated device's architectures. In this work, a simple and effective strategy for fabricating light stimulated synaptic transistors is provided by utilizing interface charge trapping effect of organic field-effect transistors (OFETs). Significantly, our devices exhibited highly synapselike behaviors, such as excitatory postsynaptic current (EPSC) and pair-pulse facilitation (PPF), and presented memory and learning ability. The EPSC decay, PPF curves, and forgetting behavior can be well expressed by mathematical equations for synaptic devices, indicating that interfacial charge trapping effect of OFETs can be utilized as a reliable strategy to realize organic light-stimulated synapses. Therefore, this work provides a simple and effective strategy for fabricating light-stimulated synaptic transistors with both memory and learning ability, which enlightens a new direction for developing neuromorphic devices.
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