Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 24, Pages 20661-20671Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b03322
Keywords
indium oxide; zine oxide; thin-film transistor; atomic layer deposition; heterostructures
Funding
- DFG [SPP 1569]
- ERC Julich, Germany [ERC-TUD1]
- KNMF, Karlsruhe Germany [2017-019 020670]
Ask authors/readers for more resources
The influence of the composition within multilayered heterostructure oxide semiconductors has a critical impact on the performance of thin-film transistor (TFT) devices. The heterostructures, comprising alternating polycrystalline indium oxide and zinc oxide layers, are fabricated by a facile atomic layer deposition (ALD) process, enabling the tuning of its electrical properties by precisely controlling the thickness of the individual layers. This subsequently results in enhanced TFT performance for the optimized stacked architecture after mild thermal annealing at temperatures as low as 200 degrees C. Superior transistor characteristics, resulting in an average field-effect mobility (mu(sat).) of 9.3 cm2 V-1 s(-1) ( W/ L = 500), an on/off ratio (I-on/ I-off) of 5.3 x 109, and a subthreshold swing of 162 mV dec(-1), combined with excellent long-term and bias stress stability are thus demonstrated. Moreover, the inherent semiconducting mechanism in such multilayered heterostructures can be conveniently tuned by controlling the thickness of the individual layers. Herein, devices comprising a higher In2O3/ZnO ratio, based on individual layer thicknesses, are predominantly governed by percolation conduction with temperature-independent charge carrier mobility. Careful adjustment of the individual oxide layer thicknesses in devices composed of stacked layers plays a vital role in the reduction of trap states, both interfacial and bulk, which consequently deteriorates the overall device performance. The findings enable an improved understanding of the correlation between TFT performance and the respective thin-film composition in ALD-based heterostructure oxides.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available