4.8 Article

Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 6, Pages 5626-5632

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b16882

Keywords

colloidal quantum dot; field-effect transistor; colloidal ink; solution-phase ligand exchange; blade-coating

Funding

  1. European Research Council through ERC Starting Grant HySPOD [306983]
  2. European Research Council through ERC Starting Grant Nanosolid [306733]
  3. Swiss Federal Commission for Technology and Innovation through the grant CTI [18614.1, 25493.3]

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Colloidal quantum dots are a class of solution processed semiconductors with good prospects for photovoltaic and optoelectronic applications. Removal of the surfactant, so-called ligand exchange, is a crucial step in making the solid films conductive, but performing it in solid state introduces surface defects and cracks in the films. Hence, the formation of thick, device-grade films have only been possible through layer-by-layer processing, limiting the technological interest for quantum dot solids. Solution-phase ligand exchange before the deposition allows for the direct deposition of thick, homogeneous films suitable for device applications. In this work, fabrication of field-effect transistors in a single step is reported using blade-coating, an upscalable, industrially relevant technique. Most importantly, a postdeposition washing step results in device properties comparable to the best layer-by-layer processed devices, opening the way for large-scale fabrication and further interest from the research community.

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