Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 29, Pages 24598-24606Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b05749
Keywords
NiO memristor; solution combustion process; analog and digital resistive switching; synaptic plasticity
Funding
- National Natural Science Foundation of China [61774172, 51402366, 61404177]
- Science and Technology Planning Projects of Guangdong Province, China [2016B090918106, 2015B010132006]
- Science and Technology Planning Project of Guangzhou, China [201607020036]
- Natural Science Foundation of Guangdong Province, China [20177612042030007]
- Basic Research Plan Program of Shenzhen City, China [JCYJ20160509100737182]
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In this study, a NiO-based resistive memristor was manufactured using a solution combustion method. In this device, both analog and digital bipolar resistive switching were observed. They are dependent on the stressed bias voltage. Prior to the electroforming, the analog bipolar resistive switching was realized through the change of the Schottky barrier at p-type NiO/Ag junction by the local migration of the oxygen ion in the interface. On the basis of the analog resistive switching, several synaptic functions were demonstrated, such as nonlinear transmission characteristics, spike-rate-dependent plasticity, long-term/short-term memory, and learning-experience behavior. In addition, once the electroforming operation was carried out using a high applied voltage, the resistive switching was changed from analog to digital. The formation and rupture of the oxygen vacancy filaments is dominant. This novel memristor with the multifunction of analog and digital resistive switching is expected to decrease the manufacturing complexity of the electrocircuits containing analog/digital memristors.
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