Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 23, Pages 19836-19843Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b06246
Keywords
bismuth ferrite; polarization; resistance switching photovoltaic effect; heterostructure
Funding
- National Natural Science Foundation of China [11434006, 51772207, 51272174]
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Epitaxial La0.1Bi0.9FeO3 (LBFO) films with SrRuO3 (SRO) bottom electrodes were fabricated on SrTiO3(001) substrates by magnetron sputtering. The LBFO thin films exhibit strong ferroelectric properties. Nonvolatile reversible resistance switchings and switchable photovoltaic effects controlled by electric field have been observed in Pt/LBFO/SRO heterostructures. With the optimized LBFO film thickness, the observed room temperature pulsed-read resistance switching ratio can reach 10(5)% magnitude by applying +/- 2.7 V pulse voltages. Besides, the observed ferroelectric switchable photovoltaic effect in the visible wavelength range shows a large tunable open-circuit photovoltage from -75 to -330 mV. The switching mechanisms in resistance and photovoltaic effects are demonstrated to be directly related to the ferroelectric reversal, which can be attributed to the polarization-modulated interfacial barriers and deep trap states.
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