Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 18, Pages 15971-15979Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b05178
Keywords
N-heteroacenes; conjugation; nonvolatile memory; donor acceptor systems; multilevel resistive switching
Funding
- AcRF Tier 1, Singapore [RG 111/17, RG 2/17, RG 8/16, RG 114/16]
- NSF of China [21206102, 21336005]
- National Excellent Doctoral Dissertation funds, China [201455]
- China Scholarship Council [201606920044]
- Postgraduate Research & Practice Innovation Program of Jiangsu Province [KYZZ16_0086]
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A novel thiadiazoloquinoxaline (TQ)-based donor acceptor (D-A)-type N-heteroacene (Py-1-TQ) has been demonstrated for promising applications in organic multilevel resistive memory devices. Compared with its counterparts (Py-0-TQ and Py-2-TQ), which show flash -type binary memory behaviors, Py-1-TQ exhibits excellent nonvolatile write-once-read-many-times -type ternary memory effects with high ON2/ONI/OFF current ratios (10(5.8):10(3.4):1), which can be attributed to the different electron-withdrawing abilities between the pyrazine unit and TQ species that can induce stepwise D-A charge-transfer processes. These results suggest that TQ-based N-heteroacenes can be potentially useful in ultrahigh-density data-storage devices through the rational D-A tuning.
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