Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 3, Pages 2745-2751Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b18370
Keywords
tunable polarity behavior; photosensitive characteristics; Schottky barrier; WS2 field-effect transistors; 2D materials
Funding
- Youth Fund of Guangdong University of Technology [16QNZD004]
- Guangdong Science and Technology Plan of China [2016A010101026]
- Pearl River S&T Nova Program of Guangzhou [201710010143]
- Key Platforms and Research Projects of Department of Education of Guangdong Province [2016KTSCX034, 2016KTSCX031]
- Science and Technology Program of Guangzhou, China [201707010324]
- National Key Research and Development Program of China [2016YFF0203604]
- National Natural Science Foundation of China [51602065, 61704034, 61705044, 11674310]
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Schottky-barrier field-effect transistors (SBFETs) based on multilayer WS2 with Au as drain/source contacts are fabricated in this paper. Interestingly, the novel polarity behavior of the WS2 SBFETs can be modulated by drain bias, ranging from p-type to ambipolar and finally to n-type conductivity, due to the transition of band structures and Schottky-barrier. heights under different drain and gate biases. The electron mobility and the on/off ratio of electron current can reach as high as 23.4 cm(2)/(V s) and 8.5 x 10(7), respectively. Moreover, the WS2 SBFET possesses high-performance photosensitive characteristics with response time of 40 ms, photoresponsivity of 12.4 A/W, external quantum efficiency of 2420%, and photodetectivity as high as 9.28 x 10(11) cm Hz(1/2)/W. In conclusion, the excellent performance of the WS2 SBFETs may pave the way for next-generation electronic and photoelectronic devices.
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